Kolkovsky, Vladimir: search on Z-Library

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1

Detection of Sulfur‐Related Defects in Sulfur Diffused n‐ and p‐Type Si by DLTS

Gwozdz, Katarzyna, Kolkovsky, Vladimir, Weber, Joerg, Yakovleva, Anastasia A., Astrov, Yuri A.

Journal:

physica status solidi (a)

Year:

2019

Language:

english

File:

PDF, 662 KB

english, 2019

2

A re-examination of cobalt-related defects in n- and p-type silicon

Leopold Scheffler, Vladimir Kolkovsky, Jörg Weber

Journal:

physica status solidi (a)

Year:

2012

Language:

english

File:

PDF, 497 KB

english, 2012

3

Identification of carbon-hydrogen complexes in n- and p-type silicon

Stübner, Ronald, Kolkovsky, Vladimir, Scheffler, Leopold, Weber, Joerg

Journal:

Physica status solidi

Year:

2016

Language:

english

File:

PDF, 386 KB

english, 2016

4

A re-examination of the interstitial Ti levels in Si

Vladimir Kolkovsky, Leopold Scheffler, Joerg Weber

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 248 KB

english, 2012

5

New Results on the Electrical Activity of 3d-Transition Metal Impurities in Silicon

Weber, Jörg, Scheffler, Leopold, Kolkovski, Vladimir, Yarykin, Nikolai

Journal:

Solid State Phenomena

Year:

2013

Language:

english

File:

PDF, 1.17 MB

english, 2013

6

Platinum‐Copper Defects in Silicon

Kolkovsky, Valery, Kolkovsky, Vladimir, Weber, Jörg

Journal:

physica status solidi (a)

Year:

2019

Language:

english

File:

PDF, 869 KB

english, 2019

7

Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique

Kolkovsky, Vladimir, Scholz, Sebastian, Kolkovsky, Valery, Schmidt, Jan-Uwe, Heller, Rene

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2018

Language:

english

File:

PDF, 981 KB

english, 2018

8

Carbon-Hydrogen Complexes in n- and p-Type SiGe-Alloys Studied by Laplace Deep Level Transient Spectroscopy

Stübner, Ronald, Kolkovsky, Vladimir, Weber, Jörg, Abrosimov, N.V.

Journal:

Solid State Phenomena

Year:

2015

Language:

english

File:

PDF, 628 KB

english, 2015

9

[IEEE 2018 22nd International Conference on Ion Implantation Technology (IIT) - Würzburg, Germany (2018.9.16-2018.9.21)] 2018 22nd International Conference on Ion Implantation Technology (IIT) - MOSFET Threshold Voltage Shift Induced By Ion Implantation Performed in Different Implanters

Kolkovsky, Vladimir, Hurrich, Arnd, Ende, Lutz

Year:

2018

Language:

english

File:

PDF, 310 KB

english, 2018

10

Carbon-hydrogen related defects in SiGe observed after dc H plasma treatment

Stübner, Ronald, Kolkovsky, Vladimir, Weber, Jörg, Abrosimov, Nikolay V.

Journal:

physica status solidi (a)

Year:

2017

Language:

english

File:

PDF, 298 KB

english, 2017

11

New Results on the Bound Exciton Luminescence in Germanium

Allardt, Matthias, Kolkovsky, Vladimir, Kolodinski, Sabine, Abrosimov, Nikolay V., Irmscher, K., Clauws, Paul, Weber, Jörg, Zuber, Kai

Journal:

Solid State Phenomena

Year:

2011

Language:

english

File:

PDF, 287 KB

english, 2011

12

Defects in Oxidized p ‐type Si Wafers Observed by Surface Photovoltage Spectroscopy

Kolkovsky, Vladimir

Journal:

physica status solidi (a)

Year:

2019

Language:

english

File:

PDF, 1.59 MB

english, 2019

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